View apt1002r4bn datasheet:

DTO-247GAPT1002RBN 1000V 7.0A 2.00SAPT1002R4BN 1000V 6.5A 2.40POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1002RBN 1002R4BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C7.0 6.5AmpsIDM Pulsed Drain Current 128 26VGS Gate-Source Voltage30 VoltsTotal Power Dissipation @ TC = 25C 240 WattsPDLinear Derating Factor 1.96 W/CTJ,TSTG Operating and Storage Junction Temperature Range-55 to 150CTL Lead Temperature: 0.063" from Case for 10 Sec.300STATIC ELECTRICAL CHARACTERISTICSSymbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNITAPT1002RBN 1000Drain-Source Breakdown VoltageBVDSSVolts(VGS = 0V, ID = 250 A)APT1002R4BN 1000On State Drain Current

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