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View apt6025bvr datasheet:

apt6025bvrapt6025bvr

APT6025BVR600V 25A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leakage Popular TO-247 PackageGSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT6025BVR UNITVDSS Drain-Source Voltage600 VoltsID Continuous Drain Current @ TC = 25C25AmpsIDM Pulsed Drain Current 1100VGS Gate-Source Voltage Continuous30VoltsVGSM Gate-Source Voltage Transient40Total Power Dissipation @ TC = 25C 370 WattsPDLinear Derating Factor 2.96 W/CTJ,TSTG Operating and Storage Junction Temperature Rang

 

Keywords - ALL TRANSISTORS DATASHEET

 apt6025bvr.pdf Design, MOSFET, Power

 apt6025bvr.pdf RoHS Compliant, Service, Triacs, Semiconductor

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