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View apt60m75 datasheet:

apt60m75apt60m75

APT60M75JVR600V 62A 0.075POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanche Tested Lower Leakage Popular SOT-227 PackageGSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT60M75JVR UNITVDSS Drain-Source Voltage600 VoltsID Continuous Drain Current @ TC = 25C62AmpsIDM Pulsed Drain Current 1248VGS Gate-Source Voltage Continuous30VoltsVGSM Gate-Source Voltage Transient40Total Power Dissipation @ TC = 25C 700 WattsPDLinear Derating Factor 5.6 W/CTJ,TSTG Operating and Storage Ju

 

Keywords - ALL TRANSISTORS DATASHEET

 apt60m75.pdf Design, MOSFET, Power

 apt60m75.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt60m75.pdf Database, Innovation, IC, Electricity

 

 
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