View apt60m90jn datasheet:

DGAPT60M90JN 600V 57A 0.090S"UL Recognized" File No. E145592 (S)ISOTOPSINGLE DIE ISOTOP PACKAGEPOWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 60M90JN UNITVDSS Drain-Source Voltage600 VoltsID Continuous Drain Current @ TC = 25C57AmpsIDM, lLM Pulsed Drain Current 1 and Inductive Current Clamped228VGS Gate-Source Voltage30 VoltsTotal Power Dissipation @ TC = 25C 690 WattsPDLinear Derating Factor 5.52 W/CTJ,TSTG Operating and Storage Junction Temperature Range-55 to 150CTL Lead Temperature: 0.063" from Case for 10 Sec.300STATIC ELECTRICAL CHARACTERISTICSSymbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNITAPT60M90JN 600Drain-Source Breakdown VoltageBVDSSVolts(VGS = 0V, ID = 250

Keywords - ALL TRANSISTORS DATASHEET

 apt60m90jn.pdf Design, MOSFET, Power

 apt60m90jn.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt60m90jn.pdf Database, Innovation, IC, Electricity