View auirf5210s datasheet:

AUTOMOTIVE GRADEAUIRF5210SFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-100Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.60mGl 175C Operating TemperatureS ID-38Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxDl Lead-Free, RoHS Compliantl Automotive Qualified *DescriptionSSpecifically designed for Automotive applications, DGthis cellular design of HEXFET Power MOSFETsutilizes the latest processing techniques to achieveD2Paklow on-resistance per silicon area. This benefitAUIRF5210Scombined with the fast switching speed andruggedized device design that HEXFET powerGDSMOSFETs are well known for, provides theGate Drain Sourcedesigner with an extremely efficient and reliabledevice for use in Automotive and a wide variety ofoth

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 auirf5210s.pdf Design, MOSFET, Power

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