View auirfb8405 datasheet:

AUTOMOTIVE GRADEAUIRFB8405FeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant GID (Silicon Limited) 185A Automotive Qualified *ID (Package Limited) 120A SDescriptionSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resistance per siliconDarea. Additional features of this design are a 175C junctionoperating temperature, fast switching speed and improvedrepetitive avalanche rating. These features combine to makeSDthis design an extremely efficient and reliable device for useGin Automotive applications and wide variety of other

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 auirfb8405.pdf Design, MOSFET, Power

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