View auirfr4105tr datasheet:

PD - 97597AAUTOMOTIVE GRADEAUIRFR4105HEXFET Power MOSFETFeaturesDV(BR)DSS55V Advanced Planar Technology Low On-ResistanceRDS(on) max.45m Dynamic dV/dT RatingGID (Silicon Limited)27A 175C Operating Temperature Fast SwitchingID (Package Limited)20AS Fully Avalanche Rated Repetitive Avalanche Allowedup toTjmax Lead-Free, RoHS CompliantD Automotive Qualified *SDescriptionGD-PakSpecifically designed for Automotive applications,AUIRFR4105this cellular design of HEXFET Power MOSFETsutilizes the latest processing techniques to achievelow on-resistance per silicon area. This benefitGDScombined with the fast switching speed andGate Drain Sourceruggedized device design that HEXFET powerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device

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