View auirlr024ntr datasheet:
PD- 96348AUTOMOTIVE GRADEAUIRLR024NAUIRLU024NFeatures Advanced Planar TechnologyHEXFET Power MOSFET Low On-ResistanceD Logic-Level Gate DriveV(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.065 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qualified *DDDescriptionSSpecifically designed for Automotive applications, this SDDCellular design of HEXFET Power MOSFETs utilizesGGthe latest processing techniques to achieve low on-D-Pak I-Pakresistance per silicon area. This benefit combined withAUIRLR024N AUIRLU024Nthe fast switching speed and ruggedized device designthat HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient andGDSreliable device for use in Automotive
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auirlr024ntr.pdf Design, MOSFET, Power
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