View auirlr3705ztr datasheet:

PD - 97611AUTOMOTIVE GRADEAUIRLR3705ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max.8.0m Fast SwitchingGID (Silicon Limited)89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant SID (Package Limited)42A Automotive Qualified *DescriptionDSpecifically designed for Automotive applications,this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-Sresistance per silicon area. Additional features of thisGdesign are a 175C junction operating temperature,D-Pakfast switching speed and improved repetitive ava-AUIRLR3705Zlanche rating . These features combine to make thisdesign an extremely efficient and reliable device forGDSuse in Automotiv

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