View auirls3114z datasheet:

PD - 96412AUTOMOTIVE GRADEAUIRLS3114ZHEXFET Power MOSFETFeaturesVDSS40VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 3.8ml Enhanced dV/dT and dI/dT capability max. 4.9ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited) 122Al Repetitive Avalanche Allowed up to TjmaxSID (Wirebond Limited)56A l Lead-Free, RoHS Compliantl Automotive Qualified *DescriptionSpecifically designed for Automotive applications, thisSHEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resistance per sili- GDcon area. Additional features of this design are a 175CD2Pakjunction operating temperature, fast switching speed andAUIRLS3114Zimproved repetitive avalanche rating . These features com-bine to make this design an extremely efficient and reliabledevice for us

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 auirls3114z.pdf Design, MOSFET, Power

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