View bc237 datasheet:

BC237/238/239Switching and Amplifier Applications Low Noise: BC239TO-921NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. EmitterAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC237 50 V : BC238/239 30 VVCEO Collector-Emitter Voltage : BC237 45 V : BC238/239 25 VVEBO Emitter-Base Voltage : BC237 6 V : BC238/239 5 VIC Collector Current (DC) 100 mAPC Collector Power Dissipation 500 mWTJ Junction Temperature 150 CTSTG Storage Temperature -55 ~ 150 CElectrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. UnitsBVCEO Collector-Emitter Breakdown Voltage: BC237 IC=2mA, IB=0 45 V: BC238/239 25 VBVEBO Emitter Base Breakdown Voltage: BC237 IE=1A, IC=0 6 V: BC238/239 5 VICES Collector Cut-off Current: BC237 V

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