View bc237 bc238 bc239 datasheet:

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC239 TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Emitter Voltage VCES V:BC237 50 VBC238/239 30Collector-Emitter Voltage VCEO:BC237 45 VBC238/239 25 VEmitter-Base Voltage VEBO:BC237 6 VBC238/239 5 VCollector Current (DC) IC 100 mACollector Dissipation PC 500 mWJunction Temperature TJ 150 Storage Temperature TSTG -55 ~ 1501. Collector 2. Base 3. EmitterELECTRICAL CHARACTERISTICS (T =25 )ACharacteristic Symbol Test Conditions Min Typ Max UnitCollector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0:BC237 45 V:BC238/239 25 VEmitter Base Breakdown Voltage BVEBO IE=1 , IC=0:BC237 6 VV:BC238/239 5Collector Cut-off Current ICESVCE=50V, IB=0 15 nA:BC237 0.2VCE=30V, IB=0 15:BC238/239 0.2 nA800

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