All Transistors. Datasheet

 

View bc237b datasheet:

bc237bbc237b

BC237BAmplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit2BASECollector-Emitter Voltage VCEO 45 VdcCollector-Emitter Voltage VCES 50 Vdc3Collector-Emitter Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTotal Power Dissipation @ TA = 25C PD 350 mWDerate above TA = 25C 2.8 mW/CTO-92Total Power Dissipation @ TA = 25C PD 1.0 WCASE 29Derate above TA = 25C 8.0 mW/CSTYLE 17Operating and Storage Temperature TJ, Tstg -55 to +150 C1Range12233THERMAL CHARACTERISTICSSTRAIGHT LEAD BENT LEADBULK PACK TAPE & REELCharacteristic Symbol Max UnitAMMO PACKThermal Resistance, Junction-to-Ambient RqJA 357 C/WThermal Resistance, Junction-to-Case RqJC 125 C/W MARKING DIAGRAMStresses exceeding Maximum R

 

Keywords - ALL TRANSISTORS DATASHEET

 bc237b.pdf Design, MOSFET, Power

 bc237b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc237b.pdf Database, Innovation, IC, Electricity

 

 
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