View bc635 bc637 bc639 datasheet:

BC635/637/639Switching and Amplifier Applications Complement to BC636/638/640TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC635 45 V: BC637 60 V: BC639 100 VVCES Collector-Emitter Voltage : BC635 45 V: BC637 60 V: BC639 100 VVCEO Collector-Emitter Voltage : BC635 45 V: BC637 60 V: BC639 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current 1 AICP Peak Collector Current 1.5 AIB Base Current 100 mAPC Collector Power Dissipation 1 WTJ Junction Temperature 150 CTSTG Storage Temperature -65 ~ 150 C PW=5ms, Duty Cycle=10%Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. UnitsBVCEO Collector-Emitter Breakdown Volt

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