View buk7520-55 2 datasheet:

Philips Semiconductors Product specification TrenchMOS transistor BUK7520-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 52 Afeatures very low on-state resistance Ptot Total power dissipation 116 Wand has integral zener diodes giving Tj Junction temperature 175 CESD protection up to 2kV. It is RDS(ON) Drain-source on-state 20 mintended for use in automotive and resistance VGS = 10 Vgeneral purpose switchingapplications.PINNING - TO220AB PIN CONFIGURATION SYMBOLPIN DESCRIPTIONdtab1 gate2 draing3 sourcetab drains1 2 3LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)S

Keywords - ALL TRANSISTORS DATASHEET

 buk7520-55 2.pdf Design, MOSFET, Power

 buk7520-55 2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buk7520-55 2.pdf Database, Innovation, IC, Electricity