View buk7528-55 datasheet:

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 40 Afeatures very low on-state resistance Ptot Total power dissipation 96 Wand has integral zener diodes giving Tj Junction temperature 175 CESD protection up to 2kV. It is RDS(ON) Drain-source on-state 28 mintended for use in automotive and resistance VGS = 10 Vgeneral purpose switchingapplications.PINNING - TO220AB PIN CONFIGURATION SYMBOLPIN DESCRIPTIONdtab1 gate2 draing3 sourcetab drains1 2 3LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SY

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