View buk7528 buk7628-100a datasheet:

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 47 AUsing trench technology which Ptot Total power dissipation 166 Wfeatures very low on-state Tj Junction temperature 175 Cresistance. It is intended for use in RDS(ON) Drain-source on-stateautomotive and general purpose resistance VGS = 10 V 28 mswitching applications.PINNINGTO220AB & SOT404 PIN CONFIGURATION SYMBOLPIN DESCRIPTIONtab dmb1 gate2 drain2g3 source1 3 1 2 3SOT404 TO220ABtab/mb drainsLIMITING VALUESLimiting values in accordance with the Absolute Maximum S

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