View buz100s datasheet:
BUZ 100SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.015RDS(on) Enhancement modeContinuous drain current 77 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ100S P-TO220-3-1 Q67040-S4001-A2 TubeBUZ100S E3045A P-TO263-3-2 Q67040-S4001-A6 Tape and ReelBUZ100S E3045 P-TO263-3-2 Q67040-S4001-A5 TubeMaximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C 77 TC = 100 C 55Pulsed drain current 308IDpulseTC = 25 CAvalanche energy, single pulse 380 mJEASID = 77 A, VDD = 25 V, RGS = 25 17 Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt dv/dtIS = 77 A, VDS
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buz100s.pdf Design, MOSFET, Power
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