View buz100sl datasheet:

BUZ 100SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.012RDS(on) Enhancement modeContinuous drain current 70 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ100SL P-TO220-3-1 Q67040-S4000-A2 TubeBUZ100SL E3045A P-TO263-3-2 Q67040-S4000-A6 Tape and ReelBUZ100SL E3045 P-TO263-3-2 Q67040-S4000-A5 TubeMaximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C 70 TC = 100 C 50Pulsed drain current 280IDpulseTC = 25 CAvalanche energy, single pulse 380 mJEASID = 70 A, VDD = 25 V, RGS = 25 17 Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt d

Keywords - ALL TRANSISTORS DATASHEET

 buz100sl.pdf Design, MOSFET, Power

 buz100sl.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz100sl.pdf Database, Innovation, IC, Electricity