View buz102s datasheet:

BUZ 102SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.018RDS(on) Enhancement modeContinuous drain current 52 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ102S P-TO220-3-1 Q67040-S4011-A2 TubeBUZ102S E3045A P-TO263-3-2 Q67040-S4011-A6 Tape and ReelBUZ102S E3045 P-TO263-3-2 Q67040-S4011-A5 TubeMaximum Ratings, at Tj = 25 C unless unless specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C 52TC = 100 C 37Pulsed drain current 208IDpulseTC = 25 CAvalanche energy, single pulse 245 mJEASID =52A, VDD =25V, RGS =2512Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt dv/dtIS =52A, VDS =40V, di/dt =

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