View buz103s datasheet:

BUZ 103SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.036RDS(on) Enhancement modeContinuous drain current 31 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ103S P-TO220-3-1 Q67040-S4009-A2 TubeBUZ103S E3045A P-TO263-3-2 Q67040-S4009-A6 Tape and ReelBUZ103S E3045 P-TO263-3-2 Q67040-S4009-A5 TubeMaximum Ratings at Tj = 25 C unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C 31TC = 100C 22Pulsed drain current 124IDpulseTC = 25 CAvalanche energy, single pulse 140 mJEASID =31A, VDD =25V, RGS =257.5Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt dv/dtIS =31A, VDS =40V, di/dt

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