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buz104lbuz104l

BUZ 104LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 104L 50 V 17.5 A 0.1 TO-220 AB C67078-S1358-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 17.5Pulsed drain current IDpulsTC = 25 C 70Avalanche energy, single pulse EAS mJID = 17.5 A, VDD = 25 V, RGS = 25 L = 114 H, Tj = 25 C 35Reverse diode dv/dt dv/dt kV/sIS = 17.5 A, VDS = 40 V, diF/dt = 200 A/sTjmax = 175 C 6Gate source voltage VGS 14 VGate-source peak voltage,aperiodic Vgs 20Power dissipation Ptot WTC = 25 C 60Semiconductor Group 1 07/96BUZ 104LMaximum RatingsParameter Symbol Values Un

 

Keywords - ALL TRANSISTORS DATASHEET

 buz104l.pdf Design, MOSFET, Power

 buz104l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz104l.pdf Database, Innovation, IC, Electricity

 

 
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