View buz104s datasheet:

BUZ 104SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.08RDS(on) Enhancement modeContinuous drain current 13.5 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104S P-TO220-3-1 Q67040-S4007-A2 TubeBUZ104S E3045A P-TO263-3-2 Q67040-S4007-A6 Tape and ReelBUZ104S E3045 P-TO263-3-2 Q67040-S4007-A5 TubeMaximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C 13.5TC = 100 C 9.6Pulsed drain current 54IDpulseTC = 25 CAvalanche energy, single pulse 52 mJEASID = 13.5 A, VDD =25V, RGS =253.5Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt dv/dtIS = 13.5 A, VD

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