View buz104sl datasheet:

BUZ 104SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.064RDS(on) Enhancement modeContinuous drain current 12.5 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104SL P-TO220-3-1 Q67040-S4006-A2 TubeBUZ104SL E3045A P-TO263-3-2 Q67040-S4006-A6 Tape and ReelBUZ104SL E3045 P-TO263-3-2 Q67040-S4006-A5 TubeMaximum Ratings, at Tj = 25 C unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C 12.5TC = 100 C 8.8Pulsed drain current 50IDpulseTC = 25 CAvalanche energy, single pulse 52 mJEASID = 12.5 A, VDD =25V, RGS =253.5Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt d

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