View buz110s datasheet:

BUZ 110SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110S P-TO220-3-1 Q67040-S4005-A2 TubeBUZ110S E3045A P-TO263-3-2 Q67040-S4005-A6 Tape and ReelBUZ110S E3045 P-TO263-3-2 Q67040-S4005-A5 TubeMaximum Ratings, at Tj = 25 C unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C, limited by bond wire 80TC = 100C 66Pulsed drain current 320IDpulseTC = 25 CAvalanche energy, single pulse 460 mJEASID =80A, VDD =25V, RGS =2520Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt dv/dtIS

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