View buz111sl datasheet:

BUZ 111SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.007RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111SL P-TO220-3-1 Q67040-S4002-A2 TubeBUZ111SL E3045A P-TO263-3-2 Q67040-S4002-A6 Tape and ReelBUZ111SL E3045 P-TO263-3-2 Q67040-S4002-A5 TubeMaximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C, 1) 80 TC = 100 C 80Pulsed drain current 320IDpulseTC = 25 CAvalanche energy, single pulse 700 mJEASID = 80 A, VDD = 25 V, RGS = 25 30 Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/

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