View buz342 datasheet:

BUZ 342 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperaturePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 342 50 V 60 A 0.01 TO-218 AA C67078-S3135-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 150 C 60Pulsed drain current IDpulsTC = 25 C 240Avalanche energy, single pulse EAS mJID = 60 A, VDD = 25 V, RGS = 25 L = 128 H, Tj = 25 C 460Reverse diode dv/dt dv/dt kV/sIS = 60 A, VDS = 40 V, diF/dt = 200 A/sTjmax = 175 C 6Gate source voltage VGS 20 VPower dissipation Ptot WTC = 25 C 400Operating temperature Tj -55 ... + 175 CStorage temperature Tstg -55 ... + 175Thermal resistance, chip case RthJC 0.37 K/WThermal resistance, chip to ambient RthJA

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