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buz344buz344

BUZ 344 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 344 100 V 50 A 0.035 TO-218 AA C67078-S3132-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 50Pulsed drain current IDpulsTC = 25 C 200Avalanche current,limited by Tjmax IAR 50Avalanche energy,periodic limited by Tjmax EAR 18.5 mJAvalanche energy, single pulse EASID = 50 A, VDD = 25 V, RGS = 25 L = 240 H, Tj = 25 C 400Gate source voltage VGS 20 VPower dissipation Ptot WTC = 25 C 170Operating temperature Tj -55 ... + 150 CStorage temperature Tstg -55 ... + 150Thermal resistance, chip case RthJC 0.74 K/WThermal resistance, chip to ambient RthJA 75DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55

 

Keywords - ALL TRANSISTORS DATASHEET

 buz344.pdf Design, MOSFET, Power

 buz344.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz344.pdf Database, Innovation, IC, Electricity

 

 
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