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View ced2303 ceu2303 datasheet:

ced2303_ceu2303ced2303_ceu2303

CED2303/CEU2303P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -9A, RDS(ON) = 200m @VGS = -10V. RDS(ON) = 320m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -9 ADrain Current-Pulsed a IDM -27 AMaximum Power Dissipation @ TC = 25 C 33 WPD- Derate above 25 C 0.22 W/ COperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 4.5 C/WThermal Resistance, Junction-to-

 

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 ced2303 ceu2303.pdf Design, MOSFET, Power

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