All Transistors. Datasheet

 

View ced6861 ceu6861 datasheet:

ced6861_ceu6861ced6861_ceu6861

CED6861/CEU6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -60 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -12 ADrain Current-Pulsed a IDM -48 AMaximum Power Dissipation @ TC = 25 C 31 WPD- Derate above 25 C 0.25 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 4 C/WThermal Resistance, Junction-to-Ambient RJ

 

Keywords - ALL TRANSISTORS DATASHEET

 ced6861 ceu6861.pdf Design, MOSFET, Power

 ced6861 ceu6861.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ced6861 ceu6861.pdf Database, Innovation, IC, Electricity

 

 
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