View cef14p20 cep14p20 ceb14p20 datasheet:
CEP14P20/CEB14P20CEF14P20PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP14P20 -200V 0.36 -13.5A -10VCEB14P20 -200V 0.36 -13.5A -10VCEF14P20 -200V 0.36 -13.5A d -10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS -200 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C -13.5 -13.5 d AID@ TC = 100 C-8.5 -8.5 d ADrain Current-Pulsed a IDM e -54-54 d AMaximum Power Dissipation @ TC = 25 C 139 42 WPD- Derate above 25 C 1.11 0.33 W/ C273Single Pulsed Avalanche Energy h EAS mJIA
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cef14p20 cep14p20 ceb14p20.pdf Design, MOSFET, Power
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