View ceh3456 datasheet:

CEH3456N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 5.5A, RDS(ON) = 42m @VGS = 10V. RDS(ON) = 59m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 5.5 ADrain Current-Pulsed a IDM 20 AMaximum Power Dissipation PD 2.0 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 62.5 C/WRev 1. 2005.July http://www.cetsemi.com8 - 38CEH3456Electrical Characteristics TA = 25 C unless otherwise notedParameter Symbol Test Conditi

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