View cem3032 datasheet:

CEM3032N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 18A, RDS(ON) = 4.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 18 ADrain Current-Pulsed a IDM 72 AMaximum Power Dissipation PD 2.5 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 50 C/WThis is preliminary information on a new product in development now . Rev 1. 2009.OctDetails are subject to

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