View cen2301 datasheet:

CEN2301P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23-T package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -20 VGate-Source Voltage VGS 8 VDrain Current-Continuous ID -2.7 ADrain Current-Pulsed a IDM -10.8 AMaximum Power Dissipation PD 1.25 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 100 C/WRev 1. 2012.July.Details are subject to change without notice . http://www.cetsemi.com1CEN2301Electrical Characteristics TA = 25 C unless otherwi

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