View cep01n65 ceb01n65 cef01n65 datasheet:

CEP01N65/CEB01N65 CEF01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP01N65 650V 10.5 1.3A 10VCEB01N65 650V 10.5 1.3A 10VCEF01N65 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESSTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 650 VGate-Source Voltage VGS V30Drain Current-Continuous ID 1.3 1.3 d ADrain Current-Pulsed a IDM e 5.2 5.2 d AMaximum Power Dissipation @ TC = 25 C 41 27 WPD- Derate above 25 C 0.33 0.22 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit Units

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