View cep01n6g ceb01n6g cef01n6g datasheet:

CEP01N6G/CEB01N6G CEF01N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP01N6G 600V 9.3 1A 10VCEB01N6G 600V 9.3 1A 10VCEF01N6G 600V 9.3 1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESSTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 600 VGate-Source Voltage VGS V30Drain Current-Continuous ID 1 1 d ADrain Current-Pulsed a IDM e 4 4 d AMaximum Power Dissipation @ TC = 25 C 41 27 WPD- Derate above 25 C 0.33 0.22 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction

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