View cep02n65a ceb02n65a cef02n65a datasheet:

CEP02N65A/CEB02N65ACEF02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP02N65A 650V 10.5 1.3A 10VCEB02N65A 650V 10.5 1.3A 10VCEF02N65A 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESSTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 650 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C 1.3 1.3 AID@ TC = 100 C A0.8 0.8 dDrain Current-Pulsed a IDM e 5.2 5.2 d AMaximum Power Dissipation @ TC = 25 C 41 27 WPD- Derate above 25 C 0.33 0.22 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal C

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