View cep02n7g ceb02n7g cef02n7g datasheet:

CEP02N7G/CEB02N7GCEF02N7GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N7G 700V 6.75 2A 10VCEB02N7G 700V 6.75 2A 10VCEF02N7G 700V 6.75 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 700 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C2 2 d AID@ TC = 100 C 1.3 1.3 d ADrain Current-Pulsed a IDM e 8 8 d AMaximum Power Dissipation @ TC = 25 C 60 33 WPD- Derate above 25 C 0.48 0.26 W/ CSingle Pulsed Avalanche Energy h EAS 11.25 mJIAS 1.5 ASingle Pulsed Avalanche Current hOperatin

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