View cep02n9 ceb02n9 cef02n9 datasheet:

CEP02N9/CEB02N9CEF02N9PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N9 900V 6.8 2.6A 10VCEB02N9 900V 6.8 2.6A 10VCEF02N9 900V 6.8 2.6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 900 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C 2.6 2.6 d AID@ TC = 100 C A1.9 1.9 dDrain Current-Pulsed a IDM e 10.4 10.4 d AMaximum Power Dissipation @ TC = 25 C 125 47 WPD- Derate above 25 C 0.83 0.3 W/ COperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal Characteristi

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