View cep12p10 ceb12p10 datasheet:

CEP12P10/CEB12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -11A, RDS(ON) =315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -100 VGate-Source Voltage VGS 30 VDrain Current-Continuous ID -11 ADrain Current-Pulsed a IDM -44 AMaximum Power Dissipation @ TC = 25 C 75 WPD- Derate above 25 C 0.5 W/ COperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 2 C/WThermal Resistance, Junction-to-Ambient RJA 62.5 C/W2005.August http://www.cetsemi.com

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