View cep14g04 ceb14g04 datasheet:

CEP14G04/CEB14G04N-Channel Enhancement Mode Field Effect Transistor FEATURES40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 VDrain Current-Continuous @ TC = 25 C 140 AID@ TC = 100 C A97Drain Current-Pulsed a IDM 560 AMaximum Power Dissipation @ TC = 25 C 100 WPD0.8 W/ C- Derate above 25 CSingle Pulsed Avalanche Energy e EAS 320 mJSingle Pulsed Avalanche Current e IAS 80 AOperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol

Keywords - ALL TRANSISTORS DATASHEET

 cep14g04 ceb14g04.pdf Design, MOSFET, Power

 cep14g04 ceb14g04.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cep14g04 ceb14g04.pdf Database, Innovation, IC, Electricity