View cep14n5 ceb14n5 cef14n5 datasheet:

CEP14N5/CEB14N5CEF14N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP14N5 500V 0.38 14A 10VCEB14N5 500V 0.38 14A 10VCEF14N5 500V 0.38 14A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 500 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C 14 d A14ID@ TC = 100 C 8.6 8.6 d ADrain Current-Pulsed a IDM e 56 56 d AMaximum Power Dissipation @ TC = 25 C 178 62 WPD- Derate above 25 C 1.4 0.5 W/ CSingle Pulsed Avalanche Energy e EAS504 mJSingle Pulsed Avalanche Current e IAS

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