View cep16n10 ceb16n10 datasheet:

CEP16N10/CEB16N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 15.2A, RDS(ON) = 120m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 15.2 ADrain Current-Pulsed a IDM 60 AMaximum Power Dissipation @ TC = 25 C 60 WPD- Derate above 25 C 0.48 W/ COperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 2.5 C/WThermal Resistance, Junction-to-Ambient RJA 50 C/WRev 1. 2010.Jan.Details are subje

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