View cep830g ceb830g cef830g datasheet:

CEP830G/CEB830G CEF830GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP830G 500V 1.5 5A 10VCEB830G 500V 1.5 5A 10VCEF830G 500V 1.5 5A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(DD-PAK) TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 500 VGate-Source Voltage VGS V30Drain Current-Continuous ID 5 5e ADrain Current-Pulsed a IDM f 20 20 e AMaximum Power Dissipation @ TC = 25 C 83 42 WPD- Derate above 25 C 0.66 0.33 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Jun

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