View cep83a3 ceb83a3 datasheet:

CEP83A3/CEB83A3N-Channel Enhancement Mode Field Effect Transistor FEATURES30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 100 ADrain Current-Pulsed a IDM 400 AMaximum Power Dissipation @ TC = 25 C 100 WPD- Derate above 25 C 0.67 W/ COperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 1.5 C/WThermal Resistance, Junction-to-Ambient RJA 62.5 C/WRe

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