View cep83a3g ceb83a3g datasheet:

CEP83A3G/CEB83A3GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 102A, RDS(ON) = 4.2 m @VGS = 10V. RDS(ON) = 6.2 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VDrain Current-Continuous @ TC = 25 C 102 AID@ TC = 100 C A72Drain Current-Pulsed a IDM 408 AMaximum Power Dissipation @ TC = 25 C 83 WPD- Derate above 25 C 0.55 W/ CSingle Pulsed Avalanche Energy d EAS 151 mJIAS 55 ASingle Pulsed Avalanche Current d Operating and Store Temperature Range TJ,Tstg -55 to 175 CThermal Characteristics

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