View ceu01n65a ced01n65a datasheet:

CED01N65A/CEU01N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 0.9A, RDS(ON) = 15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 650 VGate-Source Voltage VGS 30 VDrain Current-Continuous ID 0.9 ADrain Current-Pulsed a IDM 3.6 AMaximum Power Dissipation @ TC = 25 C 43 WPD- Derate above 25 C 0.35 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 3.5 C/WThermal Resistance, Junction-to-Ambient RJA 50 C/W Rev 1. 2010.MarDe

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