View ceu16n10 ced16n10 datasheet:

CED16N10/CEU16N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 13.3A, RDS(ON) = 120m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 13.3 ADrain Current-Pulsed a IDM 53 AMaximum Power Dissipation @ TC = 25 C 43 WPD- Derate above 25 C 0.34 W/ COperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 3.5 C/WThermal Resistance, Junction-to-Ambient RJA 50 C/WRev 1. 2010.Jan.D

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