View cs10n80 and datasheet:

Silicon N-Channel Power MOSFET R CS10N80 AND General Description VDSS 800 V CS10N80 AND, the silicon N-channel Enhanced ID 10 A PD(TC=25) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard. Features Fast Switching ESD Improved Capability Low Gate Charge (Typical Data: 65nC) Low Reverse transfer capacitances(Typical: 25pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of PC POWER. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units VDSS Drain-to-Source

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