View cs150n03 a8 datasheet:

Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson3.5m) Low Gate Charge (Typical Data:75nC) Low Reverse transfer capacitances(Typical:800pF) 100% Single Pulse avalanche energy Test Applications UPS,Inverter,Lighting. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units VDSS Drain-to-Source Voltag

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